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 LP750P100
PACKAGED 0.5 WATT POWER PHEMT
* FEATURES * 41 dBm IP3 at 12 GHz 27.5 dBm P-1dB at 12 GHz 10.5 dB Power Gain at 12 GHz 2.5 dB Noise Figure at 12 GHz 60% Power-Added-Efficiency
DESCRIPTION AND APPLICATIONS The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power/low-noise applications. The LP750 also features Si3 N4 passivation and is available in die form or in surface-mount packages. The LP750P100 is designed for medium-power, linear amplification. This device is suitable for applications in commercial and military environments, and it is appropriate to be used as a medium power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high efficiency amplifiers, and WLL systems.
*
ELECTRICAL SPECIFICATIONS @ TAmbient = 22 3 C
Parameter Output Power @ 1 dB Compression Power Gain @ 1 dB Compression Maximum Available Gain Noise Figure Power-Added Efficiency Output Intercept Point Saturated Drain-Source Current Transconductance Pinch-Off Voltage Gate-Drain Breakdown Voltage Magnitude Gate-Source Breakdown Voltage Magnitude Gate-Source Leakage Current Magnitude Symbol P1dB G1dB MAG NF IP3 IDSS GM VP |VBDGD| |VBDGS| |IGSL| Test Conditions f = 12GHz; VDS = 8V; IDS = 50% IDSS f = 12GHz; VDS = 8V; IDS = 50% IDSS f = 12GHz; VDS = 8V; IDS = 50% IDSS f = 12GHz; VDS = 5V; IDS = 33% IDSS f = 12GHz; VDS = 5V; IDS = 50% IDSS; POUT = 25dBm f = 12GHz; VDS = 8V; IDS = 50% IDSS; POUT = 10dBm VDS = 2V; VGS = 0V VDS = 2V; VGS = 0V VDS = 2V; IDS = 4mA IGD = 4mA IGS = 4mA VGS = -5V 180 230 -2.0 12 12 280 -1.2 15 16 5 45 -0.25 Min 26.0 9.0 Typ 27.5 10.5 14.0 2.5 60 41 265 Max Units dBm dB dB dB % dBm mA mS V V V A
Phone: (408) 988-1845 Fax: (408) 970-9950
http:// www.filtronicsolidstate.com
Revised: 03/02/01 Email: sales@filss.com
LP750P100
PACKAGED 0.5 WATT POWER PHEMT
* RECOMMENDED CONTINUOUS OPERATING LIMITS
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current RF Input Power Channel Operating Temperature Ambient Temperature Symbol VDS VGS IDS PIN TCH TSTG Nominal 8 -1.2 0.8 IDSS 150 150 -20/50 Units V V mA mW C C
Notes: Device should be operated at or below Recommended Continuous Operating Limits for reliable performance.
*
ABSOLUTE RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current RF Input Power Channel Operating Temperature Storage Temperature
to the device.
Symbol VDS VGS IDS IG PIN TCH TSTG
Test Conditions TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C --
Min
Max 12 -4 200% IDSS 35 250 175
Units V V mA mA mW C C
-65
175
Notes: Even temporary operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage
*
APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site. HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly and, testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
*
Phone: (408) 988-1845 Fax: (408) 970-9950
http:// www.filtronicsolidstate.com
Revised: 03/02/01 Email: sales@filss.com
LP750P100
PACKAGED 0.5 WATT POWER PHEMT
* PACKAGE OUTLINE
dimensions in mils, tolerance = 2 mils
All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filtronicsolidstate.com Revised: 03/02/01 Email: sales@filss.com


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